STS Vision 320 Mark II RIE System
The STS Vision 320 Reactive Ion Etch system is configured to etch silicon dioxide, silicon nitride, and amorphous slicon. Available gases are hydrogen, methane, sulphur hexafluoride, trifluoromethane, oxygen, argon, and nitrogen. The chamber will accomodate substrates up to 305 mm but has a 250 mm usable electrode diameter and has a 600W 13.56 MHz RF generator with automatic matching network. Opening and closing of the chamber is automatic via a pneumatically controlled hoist mechanism.
Hourly rates are applied for the use of this tool. Please use the Lab scheduler to reserve time.