Cambridge NanoTech Savannah 100 Atomic Layer Deposition (ALD)

The Cambridge NanoTech Savannah 100 Atomic Layer Deposition (ALD) system is available to deposit very conformal and precise thicknesses of various thin films. Our unit can currently be configured with the precursor chemicals to deposit hafnium oxide, aluminum oxide, titanium dioxide, and platinum. This model can be set up with two of those systems at one time so check with the lab manager for the current configuration or to request an alternate chemistry. The system chamber can accommodate substrates up to 4 inches in diameter. Surface topographies with aspect ratios greater than 2000:1 have been successfully coated using this model of ALD in Exposure Mode. Currently loaded precursors are for depositing titanium oxide and hafnium oxide.

http://www.cambridgenanotechald.com

Hourly rates are applied for the use of this tool: UMass Facility Online Manager